American Journal of Aerospace Engineering

Volume 7, Issue 1, June 2020

  • Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities

    Shoikrom Askarov, Bashirulla Sharipov, Shokhista Saliyeva, Abdulaziz Mavlyanov, Solizhon Srazev, Tuchi Toshboev

    Issue: Volume 7, Issue 1, June 2020
    Pages: 1-5
    Received: 3 June 2019
    Accepted: 13 August 2019
    Published: 8 January 2020
    Abstract: The paper reports that the intensity of generation and the concentration of low-temperature thermal donors (LTD) at 450°C in silicon, where fast diffusing impurities (FDI) are stabilized by means of binding them into electrically neutral chemically bound complexes with sulfur, are significantly lower compared to their intensity and concentration in... Show More